| Vgs (th) (Max) @ Id: | 3.8V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | PG-HSOF-8-1 |
| Séries: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 150A, 10V |
| Dissipation de puissance (max): | 375W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Package / Boîte: | 8-PowerSFN |
| Température de fonctionnement: | -55°C ~ 175°C (TJ) |
| Type de montage: | Surface Mount |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 16000pF @ 50V |
| Charge de la porte (Qg) (Max) @ Vgs: | 211nC @ 10V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 6V, 10V |
| Tension drain-source (Vdss): | 100V |
| Courant - Drainage continu (Id) à 25 ° C: | 300A (Tc) |
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